|
Doping concentration |
0.2 – 25 atm. % |
|
Orientation |
[111] |
|
Extinction Ratio |
>28 dB |
|
Dimensional tolerances |
+0/-0.05 mm |
|
Length tolerance |
±0.1 mm |
|
Surface quality |
10-5 S-D |
|
Surface flatness |
<λ/10 @ 632.8 nm |
|
Parallelism error |
<10 arcsec |
|
Perpendicularity |
<10 arcmin |
|
Protective chamfers |
<0.1 mm x 45° |
It is more suitable for diode-pumping than the traditional Nd-doped systems. It can be pumped at 0.94 μm laser output. Compared with the commonly used Nd:YAG crystal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-state lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.
|
Ideal for diode pumping; |
|
|
Very low fractional heating, less than < 11%; |
|
|
Very high slope efficiency, more than 56%; |
|
|
Broad absorption bands, about 18nm @ 940nm; |
|
|
High thermal conductivity and strength; |