Doping concentration | 0.2 – 25 atm. % |
Orientation | [111] |
Extinction Ratio | >28 dB |
Dimensional tolerances | +0/-0.05 mm |
Length tolerance | ±0.1 mm |
Surface quality | 10-5 S-D |
Surface flatness | <λ/10 @ 632.8 nm |
Parallelism error | <10 arcsec |
Perpendicularity | <10 arcmin |
Protective chamfers | <0.1 mm x 45° |
It is more suitable for diode-pumping than the traditional Nd-doped systems. It can be pumped at 0.94 μm laser output. Compared with the commonly used Nd:YAG crystal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-state lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.
Ideal for diode pumping; | |
Very low fractional heating, less than < 11%; | |
Very high slope efficiency, more than 56%; | |
Broad absorption bands, about 18nm @ 940nm; | |
High thermal conductivity and strength; |