BBO晶体应用于激光倍频、光参量放大、电光调Q等。由于BBO具有较低的潮解性,我们使用了一种有效的保护镀膜(P-coating)来防止晶体受潮。福州美扬光电有限公司可提供各种规格的高质量,大尺寸的BBO晶体. 欢迎电询!

BBO晶体是一种新型的紫外倍频晶体,具有较大的相位匹配范围以及较宽的透过波段,其倍频转换效率比较高,并具有很高的激光损伤阈值。应用:激光倍频、光参量放大、电光调Q等。由于BBO具有较低的潮解性,我们使用了一种有效的保护镀膜(P-coating)来防止晶体受潮。



Advantages of BBO Crystals

Capabilities:


Aperture:

2x2 ~ 25x25mm

Lenght:

0.01 - 25mm

Cutting Angle of BBO Crystals

And:

Determined by different kinds of homonic generartion

Phase matching type:

Type I or Type II

End Configuration:

Plano/Plano or Brewst/Brewst or Specified


Specifications of BBO Crystals


Angle tolerance:

Δθ< ± 0.5°; Δφ< ±0.5°

Dimensional Tolerance:

(W ± 0.1mm) x (H ± 0.1mm) x (L + 0.2mm/-0.1mm)

Flatness:

<λ/8 at 633nm

Surface Quality:

10/5 S/D

Parallelism:

< 20 arc seconds

Perpendicularity:

< 5 arc minutes

Wavefront Distortion:

<λ/8 at 632.8nm

Clear Aperture:

Central 95%

Chamfer:

0.15x45°

Coating:

* Protective coating is required to prevent polished surfaces from fogging.
* Anti-reflective coating should be considered if low reflectivity is required.


Properties of BBO Crystal:



Sellmeier Equations:

no2(l) = 2.7359+0.01878/(l2-0.01822)-0.01354 l2
ne2(l) = 2.3753+0.01224/(l2-0.01667)-0.01516 l2


BBO optical properties:


Transparence range: 189-3500nm


Second harmonic generation (SHG) range: 410-2400nm
Type I phase matching plane: X-Z plane, f=0o 
Type I phase matching plane: X-Z plane, f=30o


The c, , , , , rystals , , , , , , , with different angle cut for various applications are listed as follows:


1) Harmonic generations of Nd:YAG lasers:


1064nm SHG --> 532nm: 4x4x7mm Type I , q=22.8??, f=0o;
1064nm THG --> 355nm: 4x4x7mm Type I, q=31.3o, f=0o; Type II q=38.6o, f=30o
1064nm 4HG --> 266nm: 4x4x7mm Type I, q=47.6o, f=0o;
1064nm 5HG --> 213nm: 4x4x7mm Type I, q=51.1o, f=0o;


2) OPO and OPA pumped by harmonics of Nd:YAG lasers


532nm Pump --> 680-2600nm: 8x6x12mm Type I, q=21o, f=0o; 
355nm Pump --> 410-2600nm: 8x6x12mm Type I, q=30o, f=0o; Type II, q=37o, f=30o;
266nm Pump --> 295-2600nm: 8x6x12mm Type I, q=39o, f=0o;


3) Frequency doubling of dye lasers


670-530nm SHG --> 335-260nm: 8x4x7mm Type I, q=40o, f=0o;
600-440nm SHG --> 300-220nm: 8x4x7mm Type I, q=55o, f=0o;
444-410nm SHG --> 222-205nm: 8x4x7mm Type I, q=80o, f=0o;


4) Harmonic generations of Ti:Sapphire lasers


700-1000nm SHG --> 350-500nm: 5x5x0.2mm Type I, q=28o, f=0o;
700-1000nm THG --> 240-330nm: 5x5x0.2mm Type I, q=42o, f=0o;
700-1000nm FHG --> 210-240nm: 5x5x0.2mm Type I, q=66o, f=0o;


5) Frequency doubling and tripling of alexandrite lasers


720-800nm SHG --> 360-400nm: 6x4x7mm Type I, q=31o, f=0o;
720-800nm THG --> 240-265nm: 6x4x7mm Type I, q=48o, f=0o;


6) Intracavity SHG of Ar+ laser with brewster angle cut BBO


514nm SHG --> 257nm: 4x4x7mm Type I, q=51o, f=0o, B-cut;
488nm SHG --> 244nm: 4x4x7mm Type I, q=55o, f=0o, B-cut;


Mounting: In order to prevent crystals from damaging or to be easily operated, MT-Optics provide three kinds of mount of holder to install different dimension crystals. Please contact our sales for more information. 

 

Part No.

Size(mm)

Type

Θ

Φ

Coating

BBO001

4x4x7

I

22.8°

AR/AR@1064&532nm

BBO002

4x4x7

I

47.6°

AR/AR@532&266nm

BBO003

4x4x10

I

22.8°

AR/AR@1064&532nm

BBO004

4x4x10

I

47.6°

AR/AR@532&266nm

BBO005

5x5x2

I

29.2°

AR/AR@800&400nm

BBO006

5x5x1

I

29.2°

AR/AR@800&400nm

BBO007

5x5x0.3-0.5

I

29.2°

AR/AR@800&400nm

BBO008

5x5x0.1

I

29.2°

AR/AR@800&400nm




Crystal Structure

trigonal, space group R3c

Cell Parameters

a = b = 12.532Ä, c = 12.717Ä, Z = 6

Melting Point

1095 +/-5°C

Transition Temperature

925 +/-5°C

Optical Homogeneity

Dn≈10-6/cm

Mohs Hardness

4.5

Density

3.85 g/cm3

Absorption Coefficient

< 0.1%/cm (at 1064 nm)

Hygroscopic Susceptibility

low

Resistivity

> 1011 ohm-cm

Relative Dielectric Constant

T11/ 0: 6.7, T33/ 0: 8.1 
Tan , < 0.001

Thermal Expansion Coefficients(in the range of 25℃- 900℃)

a, 4 x 10-6/K 
c, 36 x 10-6/K

Thermal Conductivity

^c, 1.2 W/m/K; ||c, 1.6 W/m/K




Phase-matchable SHG range

205nm-1750nm

NLO coefficients

d11 = 5.8 x d36(KDP)
d11 = 0.05 x d11, d22< 0.05 x d11

Electro-Optic Coefficients

g11 = 2.7 pm/V, g22, g31< 0.1 g11

Half-Wave Voltage

48 KV (at 1064 nm)

Damage Threshold
at 1.064 mm 
at 0.532 mm

5 GW/cm2 (10 ns); 
10 GW/cm2 (1.3 ns)1 GW/cm2 (10 ns);
7 GW/cm2 (250 ps)

Transparency Range

189 - 3500 nm

Refractive Indices 
at 1.0642 mm 
at 0.5321 mm 
at 0.2660 mm


ne = 1.5425, no = 1.6551
ne = 1.5555, no = 1.6749
ne = 1.6146, no = 1.7571

Therm-Optic Coefficients

dno/dT = - 9.3 x 10-6/℃

dne/dT = -16.6 x 10-6/℃