产品特点

Very low fractional heating, less than11% 
Very high slope efficiency 
Broad absorption bands, about 8nm@940nm 
No excited-state absorption or up-conversion 
Conveniently pumped by reliable InGaAs diodes 
at 940nm(or 970nm) 
High thermal conductivity 
Large mechanical strength 
High optical quality

产品参数

Capabilities:

Nd dopant:0.7 ~ 30 atm%
Diameter:2 ~ 20mm
Length:1 ~ 70mm


Specifications:

Orientation:<111>( ± 5° )
Dimensional Tolerance:+/-0.1mm
Wavefront Distortion:<λ/8 at 632.8nm
Surface Quality:20/10
Parallelism:< 10 arc seconds
Perpendicularity:< 5 arc minutes
Surface Flatness:<λ/10 at 632.8nm
Clear Aperture:Central 95%
Chamfer:0.15x45°
Coating:1.HR@940nm R>99.8% + AR@1060nm R<0.2%
2.AR@940nm R<0.2% + HR@1060nm R>99.8%


Properties: 

Chemical FormulaYb:Y3Al5O12
Crystal StructureCubic
Lattice Constants12.01Ä
Melting Point1970℃
Density4.56 g/cm3
Mohs Hardness8.5
Thermal Expansion Coefficient7.8x10-6 /K , [111], 0-250℃
Thermal Conductivity14 W.s /m /K @ 20℃


Loss Coefficient0.003 cm-1
Index of Refraction1.82
Lasing Wavelength1030 nm
Pump Wavelength940 nm
Absorption band about pump wavelengt10 nm