产品特点
Very low fractional heating, less than11%
Very high slope efficiency
Broad absorption bands, about 8nm@940nm
No excited-state absorption or up-conversion
Conveniently pumped by reliable InGaAs diodes
at 940nm(or 970nm)
High thermal conductivity
Large mechanical strength
High optical quality
产品参数
Capabilities:
Nd dopant: | 0.7 ~ 30 atm% |
---|---|
Diameter: | 2 ~ 20mm |
Length: | 1 ~ 70mm |
Specifications:
Orientation: | <111>( ± 5° ) |
---|---|
Dimensional Tolerance: | +/-0.1mm |
Wavefront Distortion: | <λ/8 at 632.8nm |
Surface Quality: | 20/10 |
Parallelism: | < 10 arc seconds |
Perpendicularity: | < 5 arc minutes |
Surface Flatness: | <λ/10 at 632.8nm |
Clear Aperture: | Central 95% |
Chamfer: | 0.15x45° |
Coating: | 1.HR@940nm R>99.8% + AR@1060nm R<0.2% |
2.AR@940nm R<0.2% + HR@1060nm R>99.8% |
Properties:
Chemical Formula | Yb:Y3Al5O12 |
---|---|
Crystal Structure | Cubic |
Lattice Constants | 12.01Ä |
Melting Point | 1970℃ |
Density | 4.56 g/cm3 |
Mohs Hardness | 8.5 |
Thermal Expansion Coefficient | 7.8x10-6 /K , [111], 0-250℃ |
Thermal Conductivity | 14 W.s /m /K @ 20℃ |
Loss Coefficient | 0.003 cm-1 |
---|---|
Index of Refraction | 1.82 |
Lasing Wavelength | 1030 nm |
Pump Wavelength | 940 nm |
Absorption band about pump wavelengt | 10 nm |