1、LightGate 系列BBO Pockels Cell
LightGateBBO普克尔盒相对于KD*P普克尔盒可用于更高的激光功率和更高的重频，LightGate系列BBO普克尔盒采用双晶体结构使驱动电压降低（2.9kV，1/4波电压@1064nm,4mm通光孔径）BBO普克尔盒可用于0.2-1.65um谱宽。由于BBO的低压电耦合系数。LightGate 普克尔盒的重频可达几百KHz，LightGate用于再生放大器，高脉冲重频精密加工激光和用于材料处理和金属退火的高平均功率激光。
| 型号 | LG2.6 | LG3 | LG4 | LG5 | LG7 |
物理性质 | |||||
| 通光口径* | 2.6 mm | 3.25 mm | 4mm | 5.5mm | 7mm |
| 单程插入损失@1064nm | <1.5% | <1.5% | <1.5% | <1.5% | <1.5% |
| (十字偏振) | 1000:1 | 1000:1 | 1000:1 | 1000:1 | 1000:1 |
| (平行偏振) | 1000:1 | 1000:1 | 1000:1 | 1000:1 | 1000:1 |
| 1/4波电压(±6%)@1064nm | 1.9kV | 2.3 kV | 2.9kV | 3.8 kV | 4.7kV |
| 单程通光绮变@ 633nm | <λ/6 | <λ/6 | <λ/6 | <λ/6 | <λ/6 |
电性能 | |||||
| 电容（DC）@ 1 kHz | -4pF | -4pF | -4pF | -4pF | -4pF |
| 10-90%上升沿时间 | 1 ns | 1 ns | 1 ns | 1 ns | 1 ns |
| 占空比(加压时间/总时间) | < 5% | < 5% | < 5% | < 5% | < 5% |
2.BBO电光Q开关
BBO调制器和Q开关的操作从单次到大于50kHz的重复率是可能的，具有可忽略的压电响应。它们用于再生激光放大器中的种子和门控，激光脉冲斩波和偏振旋转应用。 BBO设备的一个优点是它们不会在传输的激光束上引起显着的压电振动，由BBO制造的Q开关可以在高重复率和高平均功率下工作。
BBO具有250nm至2100nm的有用光学波长范围。BBO晶体获得1/4或1/2波延迟所需的驱动电压可明显高于KD*P，铌酸锂和RTP晶体器件。
=宽光谱范围覆盖250~1100nm
=高消光比>1000:1 @ 633nm
=可忽略的压电效应
=高损伤阈值
=单晶体或双晶体结构
Model Number | 1150-3 | 1150-4 | 1150-5 | 1150-6 | |
Aperture Diameter, mm | 3 | 4 | 5 | 6 | |
Crystal Material | BBO (Beta Barium Borate) | ||||
Peak Optical Power Density Capability (Uniform Beam, no Hot Spots) | 850 MW/cm2 for pulses <10 nsec wide;10 GW/cm2 for pulses <100 psec wide | ||||
Range for Peak Power Density | 350-1300 nanometers | ||||
Transmission (with appropriate antireflection coatings) | >98% from 300 nm to 1100 nm | ||||
½ Wave Retardation Voltage, kVolts (See Note below) | @ 633 nm | 3.4 | 4.6 | 5.7 | 6.9 |
@ 800nm | 4.3 | 5.8 | 7.2 | 8.7 | |
@1064nm | 5.8 | 7.7 | 9.6 | 11.5 | |
Extinction Ratio, with Full Aperture Beam | >1000:1 at 633 nanometers | ||||
Intrinsic Rise Time, picoseconds | <350 | ||||
Capacitance, picofarads (approximate) | <6 | ||||
Weight, grams (approximate) | 125 | ||||
