Diode Laser x.ldm 405 to 830 nm

·                    OEM diode laser module

·                    Emit wavelengths from visible to IR range

·                    Round and elliptic profiles

·                    Driver electronics integrated in the casing

·                    Directly compatible to the LINOS Nanobench

·                    Adaptable to the LINOS Microbench

·                    Output power up to 25 mW

·                    Integral control electronics

·                    Modulatable versions

·                    Compact dimensions

·                    Lightweight

·                    Performance stability    < 5 %

·                    Beam stability    < 0.2 mrad/°C

·                    Beam divergence    < 0.6 and 0.6x3 mrad

·                    Operating temperature    -10 °C to +50 °C

·                    Storage temperature    -40 °C to +85 °C

·                    Casing length    50 to 60 mm

·                    Casing diameter    15.90 mm +0.00/-0.10 mm

·                    Connections    blank cable ends, length 400 mm

*) Attachment to the LINOS Microbench requires Adapter 16/25 G05 0309 000, see chapter Nanobench, Adapter.



Diode Laser x.ldm 405 to 830 nm

Item Title

Wavelength (nm)

Output capacity (mW)

Beam- Ø (1/e2) (mm)

x.ldm 405-1 *)

405

0.9

2.0

x.ldm 405-4 *)

405

4.0

3.5 x 2.0

x.ldm 635-1

635

0.9

3.5 x 1.5

x.ldm 635-4

634

3.0

3.5 x 1.5

x.ldm 638-25

638

25.0

3.5 x 1.5

x.ldm 650-1

650

0.9

3.5 x 1.5

x.ldm 650-3

650

3.0

3.5 x 1.5

x.ldm 785-1

785

0.9

4.0 x 2.0

x.ldm 785-3

785

3.0

4.0 x 2.0

x.ldm 785-12

785

12.0

4.0 x 2.0

x.ldm 830-25

830

25.0

4.0 x 2.0


*) Modulation capacity TTL 0 Hz to 1 kHz, 0 V = off, 5 V = on