德仪科技有限公司专业进口美国磁控溅射、电子束蒸发、热蒸发和脉冲激光真空薄膜沉积设备，以及磁控溅射源/电源、电子束蒸发源、溅射靶材和蒸发材料等。十几年来，凭着的品质，*的技术和周到的技术服务，德仪公司的产品为中国的高校、科研院所及企业的薄膜沉积工作提供了有力的支持。
我们期待为您提供您使用的真空薄膜沉积设备和部件！ 主要产品： Sputter 磁控溅射薄膜沉积系统DE500 Sputter 磁控溅射系统 Over View and Application DE500 Magnetron Sputter with sputtering chamber of four sputter sources and one sample stage for loading the substrate up to 6” diameter, the sputter chamber base vacuum pressure is10ˉ8 Torr, it can be used to sputter metals, semiconductor or insulation materials, it also can sputter alloy film or multi layer film, especially it can be used to sputter very thin film for some typical materials base on the very low sputter pressure, this is the ideal tools for thin film R&D for the university and academy. 概述和应用DE500磁控溅射仪主要包括溅射腔体，4个溅射源和一个样品台可装载并溅射zui大六英寸样品，系统极限真空度10-8托，可用于溅射金属、半导体及介质材料，可用于溅射合金及多层薄膜材料，特别的是可以维持很低的溅射气压因此可以溅射非常薄的膜层，是大专院校和科研院所从事材料和薄膜研究的理想平台 |
Features:特点：
Good Film Uniformity and repeatability 很好的薄膜均匀性和重复性
Safety interlock for critical components 关键部件安全互锁保护
Configuration 主要配置 Magnetron Sputter Chamber溅射真空腔室D shape, 304 stainless steel chamber with viewport磁控溅射腔体为304不锈钢，并有观察窗Vacuum Pumping真空泵Turbo pump and dry rough pump with sputter chamber溅射室配备分子泵和无油机械泵Vacuum Valve真空阀门Pneumatic operation high vacuum and isolation gate valves气动控制高真空和隔离插板阀门Chamber Vent Valve, Rough and Foreline angle valve, and gas valve腔体充气阀门，粗抽和前级角阀，气体截止阀Sputtering Sources溅射源Four 4” circle magnetron sputtering sources4个4英寸圆形磁控溅射源Each source with Pneumatic shutter每个源配备手动挡板The power supply can be DC, pulse DC or RF power supply电源可以配备直流，脉冲直流或射频电源Sample Stage 样品台 Substrate linear motion, rotating, and the sample heating or water cooling, Up to 6” substrate with Pneumatic substrate shutte样品台直线升降和旋转，样品可加热或冷却，zui大6英寸基片装载能力，配气动样品挡板Vacuum Gauging真空测量Wide range vacuum gauge and Pirani rough gauge宽量程真空计用于测量真空和皮拉尼粗抽计Pressure Control压力控制Three Mass flow controller三路流量计Capacitance manometer for sputter process pressure control一个压力计实现溅射压力控制Cooled Water Interlock冷水安全互锁There are cooled water flow sensors of interlock to protect sputter sources work properly溅射源冷却水路配水流传感器对溅射源安全互锁保护Load LockOptionO2 reactive, RF plasma cleaning, single or multi substrate loading可选,通氧反应，射频等离子体清洗, 单基片或多基片装载能力
Specification 主要技术指标 Sputter Chamber Size磁控溅射腔体尺寸450mm wide x 430mm deep x 450mm high450mm宽430mm深450mm高The Base Vacuum Pressure in Sputter Chamber溅射腔体极限真空度better than 5E-8 Torr优于5E-8托Sample Loading Capacity装样能力Max. 6 inch flat substratezui大6英寸的平板基片The Max. Temperature of the Sample Heater样品加热器zui高温度1000C1000度The film uniformity膜厚均匀性better than +/-3% over a rotating 4 inch Silicon wafer在旋转的4英寸硅基片上的膜厚均匀性由于+/-3%General Sputtering Pressure通用溅射压力1-5 mTorr1至5毫托 |